H57V2562GTR i/o equivalent, 256mb synchronous dram based on 4m x 4bank x16 i/o.
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Standard SDRAM Protocol Internal 4bank operation Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V All device pins are compa.
which requires large memory density and high bandwidth. It is organized as 4banks of 4,194,304 x 16 I/O. Synchronous DRA.
and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Aug. 2009 1
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Synchronous DRAM Memory 256Mbit H57V2562GTR Series
H57V.
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